Synthesis and Characterization of the Ternary Nitride Semiconductor Zn₂VN₃: Theoretical Prediction, Combinatorial Screening, and Epitaxial Stabilization

Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in of a novel ternary nitride Zn$_2$VN$_3$. Following combinatorial PVD screening, we isolate and synthesize polycrystalline Zn$_2$VN$_3$ thin films with wurtzite structure on conventional borosilicate glass substrates. In addition, demonstrate that cation-disordered, but phase-pure (002)-textured, can be grown using epitaxial stabilization {\alpha}-Al2O3 (0001) substrates at remarkably low growth temperatures well below 200 {\deg}C. The structural properties composition are studied detail XRD (S)TEM techniques. as chemical state constituent elements RBS/ERDA XPS/HAXPES methods. These analyses reveal stoichiometric material no oxygen contamination, besides surface oxide. We find weakly-doped p-type semiconductor demonstrating broadband room-temperature photoluminescence spanning range between 2 eV 3 eV. electronic tuned over wide via isostructural alloying cation site, making this promising for optoelectronic applications.